| PART |
Description |
Maker |
| ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
NPN Low Sat Transistor
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR 50V NPN硅低饱和开关晶体管
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
Zetex Semiconductor PLC
|
| 2SD1760 2SD1864 2SD1864P 2SD1760Q |
Power Transistor 50V, 3A 功率晶体0VA
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252 晶体管|晶体管|叩| 50V五（巴西）总裁| 3A条一（c）|52
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SIP
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| ZXT12N50DX ZXT12N50DXTA ZXT12N50DXTC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Dual NPN Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
| 2SD330D 2SD330E 2SB514C 2SB514E 2SB514F |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-220
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-220AB
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 50V五（巴西）总裁|甲一（c）| TO - 220AB现有
|
Advanced Interconnections, Corp.
|
| 2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 |
50V,0.5A medium power transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (50V, 0.5A)
From old datasheet system
Medium Power Transistor (50V/ 0.5A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁| 500mA的一（c）| SPAK
|
Rohm
|
| 2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3
TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五（巴西）总裁| 7A条一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五（巴西）总裁| 100mA的一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五（巴西）总裁|5A一（c）|6
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V.
Microsemi, Corp.
|
| 2SB892 2SD1207 2SB892S 2SD1207S 2SD1207T |
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）|2VAR
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-92VAR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-92VAR
Large-Current Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 4608H-701-332/472 4608H-701-332/272 4608H-701-332/ |
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0027uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 100000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 82ohm, 50V, 0.00012uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 82ohm, 50V, 0.00022uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 390000ohm, 50V, 0.027uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 1500ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 10000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 330ohm, 50V, 0.0001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 33ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 1200ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-9
Thick Film Resistor Network; Series:4600X; Resistance:22ohm; Resistance Tolerance: 5, - 20%; Power Rating:1.13W; Operating Temperature Range:-55 C to ? C; Resistor Element Material:Thick Film; Voltage Rating:100VDC RoHS Compliant: No
RC NETWORK, BUSSED, 100000ohm, 50V, 0.0039uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33000ohm, 50V, 0.001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00068uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100000ohm, 50V, 0.033uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 330ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-9
|
Bourns, Inc.
BOURNS INC
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA114YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
|
